@article{1071, author = {Blachowicz, Tomasz and Ehrmann, Andrea}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {15}, publisher = {AIP Publishing}, title = {{Magnetization reversal in bent nanofibers of different cross sections}}, doi = {10.1063/1.5022065}, volume = {124}, year = {2018}, } @article{1432, author = {Pohlit, Merlin and Stockem, Irina and Porrati, Fabrizio and Huth, Michael and Schröder, Christian and Müller, Jens}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {14}, publisher = {AIP Publishing}, title = {{Experimental and theoretical investigation of the magnetization dynamics of an artificial square spin ice cluster}}, doi = {10.1063/1.4961705}, volume = {120}, year = {2016}, } @article{3527, abstract = { The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour. }, author = {Corpus-Mendoza, Asiel N. and De Souza, M. M. and Hamelmann, Frank}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {18}, publisher = {AIP Publishing}, title = {{Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells}}, doi = {10.1063/1.4831661}, volume = {114}, year = {2013}, } @article{3529, abstract = {Doped zinc oxide films are of high interest in thin film solar cell technology for application as transparent conducting oxide. Rapid and detailed characterisation of ZnO thin film properties is required for quality control and optimisation of the deposited films. In the present work, a new model of dielectric functions based on the effective medium approximation (EMA) is developed and is applied for characterisation of polycrystalline boron doped zinc oxide (ZnO:B) films, deposited by low pressure chemical vapour deposition (LPCVD) technique onto glass substrates. The model takes into account that polycrystalline ZnO is considered to consist of crystal grains surrounded by depletion layers. Using this model and Fourier Transform Infrared Spectroscopy (FTIR) performed in reflection configuration over a wide mid-infrared spectral region (from 2 μm up to 25 μm), the properties of depletion layer and the bulk of the grains in ZnO can be rapidly characterised in detail, and the volume fraction of the depletion layer can be extracted. The results are in good agreement with previously presented theories of electron transport in polycrystalline materials. Using electrical measurements like conductivity and Hall techniques in addition to the optically determined parameters, predominant electron scattering mechanisms in polycrystalline films for different doping levels are identified. The measurements show the impact of the doping level on depletion layer of the crystallites. It is shown, furthermore, that under a water vapour rich environment the volume fraction of the depletion layer may increase up to 5 times and more, while the mobility of the charge carriers in the depletion layer drops drastically from about 31 cm2V−1s−1 to about 8 cm2V−1s−1. This indicates that water vapour exposure causes an increase of the potential barrier in the grain boundary depletion layer, limiting the electron transport across the grain boundaries to a classical thermionic emission mechanism. }, author = {Prunici, P. and Hamelmann, Frank and Beyer, W. and Kurz, H. and Stiebig, H.}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {12}, publisher = {AIP Publishing}, title = {{Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films}}, doi = {10.1063/1.4795809}, volume = {113}, year = {2013}, } @article{2676, author = {Kämmerer, S. and Heitmann, Sonja and Meyners, D. and Sudfeld, D. and Thomas, A. and Hütten, A. and Reiss, G.}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {10}, pages = {7945--7947}, publisher = {AIP Publishing}, title = {{Room-temperature preparation and magnetic behavior of Co2MnSi thin films}}, doi = {10.1063/1.1556249}, volume = {93}, year = {2003}, } @article{2675, author = {Luciński, T. and Kopcewicz, M. and Hütten, A. and Brückl, H. and Heitmann, Sonja and Hempel, T. and Reiss, G.}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {10}, pages = {6501--6503}, publisher = {AIP Publishing}, title = {{Magnetic and Mössbauer study of Fe/Si multilayers}}, doi = {10.1063/1.1558656}, volume = {93}, year = {2003}, } @article{2685, author = {Heitmann, S. and Hütten, A. and Hempel, T. and Schepper, W. and Reiss, G. and Alof, C.}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {9}, pages = {4849--4851}, publisher = {AIP Publishing}, title = {{Interplay of antiferromagnetic coupling in copper/permalloy combination multilayers}}, doi = {10.1063/1.373179}, volume = {87}, year = {2000}, } @article{3557, abstract = { W 1−x Si x /Si multilayers (MLs) (x⩽0.66) were deposited onto oxidized Si substrates, heat treated by rapid thermal (RTA) and standard furnace annealing up to 1000 °C for 30 s and 25 min, respectively, and analyzed by various x-ray techniques and Rutherford backscattering spectrometry. W1−xSix/Si MLs are more stable the higher the value of x because the driving force for interdiffusion is suppressed by the doping; the temperature for complete interdiffusion increases from 500 to 850 °C as x increases from 0 to 0.66. The as-deposited MLs were amorphous. Their thermal stability increases with increasing x. The interface roughness is independent of x but increases with increasing RTA temperature. The reflectivity of W1−xSix/Si MLs is lower than that of W/Si because of lower optical contrast. }, author = {Senderak, R. and Jergel, M. and Luby, S. and Majkova, E. and Holy, V. and Haindl, G. and Hamelmann, Frank and Kleineberg, U. and Heinzmann, U.}, issn = {1089-7550}, journal = {Journal of Applied Physics}, number = {5}, pages = {2229--2235}, publisher = {AIP Publishing}, title = {{Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing}}, doi = {10.1063/1.364273}, volume = {81}, year = {1997}, }